1. product pro?le 1.1 general description npn/pnp resistor-equipped transistors (ret). 1.2 features n built-in bias resistors n simpli?es circuit design n reduces component count n reduces pick and place costs 1.3 applications n low current peripheral driver n control of ic inputs n replaces general-purpose transistors in digital applications 1.4 quick reference data PEMD15; pumd15 npn/pnp resistor-equipped transistors; r1 = 4.7 k w , r2 = 4.7 k w rev. 02 25 april 2005 product data sheet table 1: product overview type number package pnp/pnp complement npn/npn complement philips jeita PEMD15 sot666 - pemb15 pemh15 pumd15 sot363 sc-88 pumb15 pumh15 table 2: quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 50 v i o output current (dc) - - 100 ma r1 bias resistor 1 (input) 3.3 4.7 6.1 k w r2/r1 bias resistor ratio 0.8 1 1.2
9397 750 14215 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 2 of 10 philips semiconductors PEMD15; pumd15 npn/pnp resistor-equipped transistors; r1 = 4.7 k w , r2 = 4.7 k w 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china table 3: pinning pin description simpli?ed outline symbol 1 gnd (emitter) tr1 2 input (base) tr1 3 output (collector) tr2 4 gnd (emitter) tr2 5 input (base) tr2 6 output (collector) tr1 001aab555 6 4 5 1 3 2 65 4 1 23 r2 tr1 tr2 r1 r2 r1 006aaa143 table 4: ordering information type number package name description version PEMD15 - plastic surface mounted package; 6 leads sot666 pumd15 sc-88 plastic surface mounted package; 6 leads sot363 table 5: marking codes type number marking code [1] PEMD15 5e pumd15 d0*
9397 750 14215 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 3 of 10 philips semiconductors PEMD15; pumd15 npn/pnp resistor-equipped transistors; r1 = 4.7 k w , r2 = 4.7 k w 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [2] re?ow soldering is the only recommended soldering method. table 6: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per transistor; for the pnp transistor with negative polarity v cbo collector-base voltage open emitter - 50 v v ceo collector-emitter voltage open base - 50 v v ebo emitter-base voltage open collector - 10 v v i input voltage tr1 positive - +30 v negative - - 10 v input voltage tr2 positive - +10 v negative - - 30 v i o output current (dc) - 100 ma i cm peak collector current - 100 ma p tot total power dissipation t amb 25 c sot363 [1] - 200 mw sot666 [1] [2] - 200 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb ambient temperature - 65 +150 c per device p tot total power dissipation t amb 25 c sot363 [1] - 300 mw sot666 [1] [2] - 300 mw
9397 750 14215 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 4 of 10 philips semiconductors PEMD15; pumd15 npn/pnp resistor-equipped transistors; r1 = 4.7 k w , r2 = 4.7 k w 6. thermal characteristics [1] device mounted on a fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] re?ow soldering is the only recommended soldering method. 7. characteristics table 7: thermal characteristics symbol parameter conditions min typ max unit per transistor r th(j-a) thermal resistance from junction to ambient in free air sot363 [1] - - 625 k/w sot666 [1] [2] - - 625 k/w per device r th(j-a) thermal resistance from junction to ambient in free air sot363 [1] - - 416 k/w sot666 [1] [2] - - 416 k/w table 8: characteristics t amb = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per transistor; for the pnp transistor with negative polarity i cbo collector-base cut-off current v cb =50v; i e = 0 a - - 100 na i ceo collector-emitter cut-off current v ce =30v; i b =0a - - 1 m a v ce =30v; i b =0a; t j = 150 c --50 m a i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 0.9 ma h fe dc current gain v ce =5v; i c =10ma 30 - - v cesat collector-emitter saturation voltage i c = 10 ma; i b = 0.5 ma - - 150 mv v i(off) off-state input voltage v ce =5v; i c = 100 m a - 1.1 0.5 v v i(on) on-state input voltage v ce = 0.3 v; i c = 20 ma 2.5 1.9 - v r1 bias resistor 1 (input) 3.3 4.7 6.1 k w r2/r1 bias resistor ratio 0.8 1 1.2 c c collector capacitance v cb =10v; i e =i e =0a; f = 1 mhz tr1 (npn) - - 2.5 pf tr2 (pnp) - - 3 pf
9397 750 14215 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 5 of 10 philips semiconductors PEMD15; pumd15 npn/pnp resistor-equipped transistors; r1 = 4.7 k w , r2 = 4.7 k w v ce =5v (1) t amb = 150 c (2) t amb =25 c (3) t amb = - 40 c i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c fig 1. tr1 (npn): dc current gain as a function of collector current; typical values fig 2. tr1 (npn): collector-emitter saturation voltage as a function of collector current; typical values v ce = 0.3 v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c v ce =5v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c fig 3. tr1 (npn): on-state input voltage as a function of collector current; typical values fig 4. tr1 (npn): off-state input voltage as a function of collector current; typical values i c (ma) 10 - 1 10 2 10 1 006aaa030 10 2 10 10 3 h fe 1 (1) (2) (3) i c (ma) 110 2 10 006aaa031 10 - 1 1 v cesat (v) 10 - 2 (1) (2) (3) 006aaa032 i c (ma) 10 - 1 10 2 10 1 1 10 v i(on) (v) 10 - 1 (2) (1) (3) 006aaa033 i c (ma) 10 - 2 10 1 10 - 1 1 10 v i(off) (v) 10 - 1 (1) (2) (3)
9397 750 14215 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 6 of 10 philips semiconductors PEMD15; pumd15 npn/pnp resistor-equipped transistors; r1 = 4.7 k w , r2 = 4.7 k w v ce = - 5v (1) t amb = 150 c (2) t amb =25 c (3) t amb = - 40 c i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c fig 5. tr2 (pnp): dc current gain as a function of collector current; typical values fig 6. tr2 (pnp): collector-emitter saturation voltage as a function of collector current; typical values v ce = - 0.3 v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c v ce = - 5v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c fig 7. tr2 (pnp): on-state input voltage as a function of collector current; typical values fig 8. tr2 (pnp): off-state input voltage as a function of collector current; typical values i c (ma) - 10 - 1 - 10 2 - 10 - 1 006aaa213 10 2 10 10 3 h fe 1 (1) (2) (3) i c (ma) - 1 - 10 2 - 10 006aaa214 - 10 - 1 - 1 v cesat (v) - 10 - 2 (1) (2) (3) 006aaa215 i c (ma) - 10 - 1 - 10 2 - 10 - 1 - 1 - 10 v i(on) (v) - 10 - 1 (1) (3) (2) 006aaa216 i c (ma) - 10 - 2 - 10 - 1 - 10 - 1 - 1 - 10 v i(off) (v) - 10 - 1 (1) (3) (2)
9397 750 14215 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 7 of 10 philips semiconductors PEMD15; pumd15 npn/pnp resistor-equipped transistors; r1 = 4.7 k w , r2 = 4.7 k w 8. package outline 9. packing information [1] for further information and the availability of packing methods, see section 15 . [2] t1: normal taping [3] t2: reverse taping fig 9. package outline sot363 (sc-88) fig 10. package outline sot666 04-11-08 dimensions in mm 0.25 0.10 0.3 0.2 pin 1 index 1.3 0.65 2.2 2.0 1.35 1.15 2.2 1.8 1.1 0.8 0.45 0.15 13 2 4 65 dimensions in mm 04-11-08 1.7 1.5 1.7 1.5 1.3 1.1 1 0.18 0.08 0.27 0.17 0.5 pin 1 index 123 4 5 6 0.6 0.5 0.3 0.1 table 9: packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 4000 8000 10000 PEMD15 sot666 2 mm pitch, 8 mm tape and reel - - -315 - 4 mm pitch, 8 mm tape and reel - -115 - - pumd15 sot363 4 mm pitch, 8 mm tape and reel; t1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 - - -165
9397 750 14215 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 8 of 10 philips semiconductors PEMD15; pumd15 npn/pnp resistor-equipped transistors; r1 = 4.7 k w , r2 = 4.7 k w 10. revision history table 10: revision history document id release date data sheet status change notice doc. number supersedes PEMD15_pumd15_2 20050425 product data sheet - 9397 750 14215 pumd15_1 modi?cations: ? the format of this data sheet has been redesigned to comply with the new presentation and information standard of philips semiconductors. ? type PEMD15 added ? t ab le 8 char acter istics : v i(on) and v i(off) rede?ned to v i(on) and v i(off) ? figure 1 , 2 , 3 , 4 , 5 , 6 , 7 and 8 : electrical graphs for tr1 (npn) and tr2 (pnp) added ? section 9 p ac king inf or mation : added ? section 14 t r ademar ks : added pumd15_1 20040204 product speci?cation - 9397 750 11864 -
philips semiconductors PEMD15; pumd15 npn/pnp resistor-equipped transistors; r1 = 4.7 k w , r2 = 4.7 k w 9397 750 14215 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 9 of 10 11. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 13. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 14. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. 15. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 25 april 2005 document number: 9397 750 14215 published in the netherlands philips semiconductors PEMD15; pumd15 npn/pnp resistor-equipped transistors; r1 = 4.7 k w , r2 = 4.7 k w 16. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 packing information. . . . . . . . . . . . . . . . . . . . . . 7 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 9 12 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 14 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 15 contact information . . . . . . . . . . . . . . . . . . . . . 9
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